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High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 104, 193112 (2014)
Date:
2014-05-05

Author Information

Name Institution
Joong Gun OhKorea Advanced Institute of Science and Technology

Films

Plasma AlN


Film/Plasma Properties

Substrates

Notes

229