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XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 315 (2014) 104-109
Date:
2014-07-18
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.07.105

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Si(111)

Notes

200