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Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Type:
Journal
Info:
Scientific Reports 6, Article number: 27676 (2016)
Date:
2016-06-09
DOI:
http://dx.doi.org/10.1038/srep27676

Author Information

Name Institution
Qingkai QianHong Kong University of Science and Technology
Baikui LiHong Kong University of Science and Technology
Mengyuan HuaHong Kong University of Science and Technology
Zhaofu ZhangHong Kong University of Science and Technology
Feifei LanThe 46th Research Institute of CETC
Yongkuan XuThe 46th Research Institute of CETC
Ruyue YanThe 46th Research Institute of CETC
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 170C

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

Notes

993