About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 062408 (2020)
Date:
2020-10-13
DOI:
http://dx.doi.org/10.1116/6.0000454

Author Information

Name Institution
Gilbert B. RaynerKurt J. Lesker Company
Noel O'TooleKurt J. Lesker Company
Jeffrey ShallenbergerThe Pennsylvania State University
Blaine JohsFilm Sense LLC

Films

Plasma TiN

Hardware used: Kurt J Lesker ALD-150LX
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Plasma TiN

Hardware used: Kurt J Lesker ALD-150LX
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma AlN

Hardware used: Kurt J Lesker ALD-150LX
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Plasma SiNx

Hardware used: Kurt J Lesker ALD-150LX
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1EX

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1EX

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Jandel

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: Ulvac-Phi ADEPT-1010

Substrates

Si with native oxide
SiO2

Notes

1538