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Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method

Type:
Journal
Info:
Electronic Materials Letters, Vol. 5, No. 2 (2009), pp. 83--86
Date:
2009-06-01
DOI:
http://dx.doi.org/10.3365/eml.2009.06.083

Author Information

Name Institution
Kwang-Ho KimCheongju University
No-Won KwakCheongju University
Soo Hong LeeSejong University

Films

Plasma AlN

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 25-500C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4192A

Substrates

GaN

Notes

742