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Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Type:
Journal
Info:
Scripta Materialia, Volume 93, Pages 44 - 47
Date:
2014-08-31
DOI:
https://doi.org/10.1016/j.scriptamat.2014.08.027

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Ramasis GoswamiU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Pt

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)
HfO2
Pt

Notes

1381