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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Inorganic Materials, 2015, Vol. 51, No. 7, pp. 728-735
Date:
2014-11-24
DOI:
http://dx.doi.org/10.1134/S0020168515070158

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
M. Yu. ShevchenkoNorth-Caucasus Federal University
D. P. ValyukhovNorth-Caucasus Federal University
S. V. LisitsynNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University

Films

Plasma AlN

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 80-260C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: FSM-1201 FTIR

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: JEOL JAMP-9510F

Substrates

Si(111)

Notes

398