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Practical Challenges of Processing III-Nitride/Graphene/SiC Devices

Type:
Journal
Info:
CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA
Date:
2015-05-18
DOI:
http://csmantech.org/OldSite/Digests/2015/papers/13.5-076.pdf

Author Information

Name Institution
Andrew D. KoehlerU.S. Naval Research Laboratory
Neeraj NepalSotera Defense Solutions
Marko J. TadjerU.S. Naval Research Laboratory
Rachael L Myers-WardU.S. Naval Research Laboratory
Virginia D. WheelerU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Jordan D. GreenleeU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Leakage Current
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Graphene

Notes

760