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Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Type:
Journal
Info:
Journal of Applied Physics 114, 154108 (2013)
Date:
2013-09-30
DOI:
http://dx.doi.org/10.1063/1.4825259

Author Information

Name Institution
Varistha ChobpattanaUniversity of California - Santa Barbara (UCSB)
Thomas E. MatesUniversity of California - Santa Barbara (UCSB)
William J. MitchellUniversity of California - Santa Barbara (UCSB)
Jack Y. ZhangUniversity of California - Santa Barbara (UCSB)
Susanne StemmerUniversity of California - Santa Barbara (UCSB)

Films

Plasma AlN

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

InGaAs

Notes

1376