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Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
2015 Appl. Phys. Express 8 064101
Date:
2015-04-19
DOI:
http://dx.doi.org/10.7567/APEX.8.064101

Author Information

Name Institution
Yunyou LuHong Kong University of Science and Technology
Qimeng JiangHong Kong University of Science and Technology
Zhikai TangHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

437