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GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Type:
Journal
Info:
J. Vac. Sci. Technol. B 31(5), Sep/Oct 2013
Date:
2013-07-30
DOI:
http://dx.doi.org/10.1116/1.4816477

Author Information

Name Institution
Ya-Hsi HwangUniversity of Florida
Lu LiuUniversity of Florida
Camilo VelezUniversity of Florida
Fan RenUniversity of Florida
Brent P. GilaUniversity of Florida
David HaysUniversity of Florida
S. J. PeartonUniversity of Florida
Eric LambersUniversity of Florida
Ivan I. KravchenkoOak Ridge National Laboratory
C-F LoIQE
Jerry W. JohnsonIQE

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam EC110

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam EC110

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Perkin Elmer 5100

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer 660

Characteristic: On/Off Current Ratio
Analysis: -
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Characteristic: Transconductance
Analysis: -
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Substrates

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.
Additional HEMT electrical properties are reported.
130