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Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

Type:
Journal
Info:
RSC Adv., 2015, 5, 37881-37886
Date:
2015-04-21
DOI:
http://dx.doi.org/10.1039/C5RA04728E

Author Information

Name Institution
Duo CaoChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Ya-Hong XieUniversity of California - Los Angeles (UCLA)
Li ZhengUniversity of California - Los Angeles (UCLA)
Zhongjian WangChinese Academy of Sciences
Xinke YuUniversity of California - Los Angeles (UCLA)
Jia WangUniversity of California - Los Angeles (UCLA)
DaShen ShenUniversity of Alabama in Huntsville
Yuehui YuChinese Academy of Sciences

Films

Plasma AlN

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

AlGaN
GaN

Notes

462