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Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022419 (2020)
Date:
2020-02-04
DOI:
http://dx.doi.org/10.1116/1.5131087

Author Information

Name Institution
David Dustin FischerTechnische Universität Dresden
Martin KnautTechnische Universität Dresden
Johanna ReifTechnische Universität Dresden
Frederik NehmTechnische Universität Dresden
Matthias AlbertTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Omicron Nanotechnology XM 1000 MkII/Sphera system

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4700

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Diagnostic: Custom

Substrates

Si with native oxide
Pt
PEN, Polyethylene Napthalate

Notes

1459