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Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Type:
Journal
Info:
Inorg. Chem. 2021, 60, 15, 11025-11031
Date:
2021-07-12
DOI:
http://dx.doi.org/10.1021/acs.inorgchem.1c00731

Author Information

Name Institution
Sydney C. ButteraCarleton University
Polla RoufLinköping University
Petro DeminskyiLinköping University
Nathan J. O'BrienLinköping University
Henrik PedersenLinköping University
Sean T. BarryCarleton University

Films

Plasma AlN

Hardware used: Picosun R200
2DMAAl, (Me2N)2AlH2, bis(dimethylamido)alane
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Stress
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Strain
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: LEO 1550

Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry
Diagnostic: TA Instruments DSC Q10

Substrates

Silicon

Notes

1601