About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Structural and optical characterization of low-temperature ALD crystalline AlN

Type:
Journal
Info:
Journal of Crystal Growth 421 (2015) 45 - 52
Date:
2015-04-07

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si(100)
Si(111)
Sapphire

Notes

357