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Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A114 (2013)
Date:
2012-10-11
DOI:
http://dx.doi.org/10.1116/1.4764112

Author Information

Name Institution
Wenwen LeiBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication

Films

Plasma AlN

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 250-300C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Quantera SXM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Quantera SXM

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2200PC

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Dektak

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

Silicon

Notes

Plasma left on during entire deposition process resulting in very large growth rates, as high as 1.04nm/cycle.
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