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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-09-30
DOI:
http://dx.doi.org/10.1116/1.3664306

Author Information

Name Institution
Alexander Pyymaki PerrosAalto University
Markus BosundAalto University
Timo SajavaaraUniversity of Jyväskylä
Mikko LaitinenUniversity of Jyväskylä
Lauri SainiemiAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Philips Plasmos SD 2300

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Substrates

Si(100)

Notes

Beneq TFS-500 PEALD AlN for SF6/O2 plasma etch mask study.
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