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Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Type:
Conference Proceedings
Info:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)
Date:
2016-08-22
DOI:
http://dx.doi.org/10.1109/NANO.2016.7751501

Author Information

Name Institution
Yen-Ku LinNational Chiao Tung University
Shuichi NodaTohoku University
Ruey-Bor LeeNational Chiao Tung University
Chia-Ching HuangNational Chiao Tung University
Quang Ho LucNational Chiao Tung University
Seiji SamukawaTohoku University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

AlGaN

Notes

935