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Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (27), pp 17599-17605
Date:
2016-06-13
DOI:
http://dx.doi.org/10.1021/acsami.6b03194

Author Information

Name Institution
Yongmin KimStanford University
J ProvineStanford University
Steve P. WalchStanford University
Joonsuk ParkStanford University
Witchukorn PhuthongStanford University
Anup L. DadlaniStanford University
Hyo Jin KimStanford University
Peter SchindlerStanford University
Ki-Hyun KimSamsung Electronics Co.
Fritz B. PrinzStanford University

Films

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Plasma SiAlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: Custom

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Nova 600i Nanolab

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Agilent 5500

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2636A Source Meter

Substrates

SiO2
Quartz

Notes

886