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Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes

Type:
Journal
Info:
Applied Physics Letters 120, 232901 (2022)
Date:
2022-05-22
DOI:
http://dx.doi.org/10.1063/5.0083656

Author Information

Name Institution
Alexis PayneU.S. Army Research Laboratory
H. Alex HsainNorth Carolina State University
Younghwan LeeNorth Carolina State University
Nicholas A. StrnadU.S. Army Research Laboratory
Jacob L. JonesNorth Carolina State University
Brendan HanrahanU.S. Army Research Laboratory

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 270C

Thermal HfAlOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 270C

Thermal HfAlOx

Hardware used: Kurt J Lesker ALD-150L
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Radient Technologies Precision Premier II

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Radient Technologies Precision Premier II

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Loss Tangent
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

SiO2
Pt

Notes

1739