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Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanomaterials 2023, 13, 161
Date:
2022-12-27
DOI:
http://dx.doi.org/10.3390/nano13010161

Author Information

Name Institution
Boyun ChoiChungnam National University
Hyeong-U KimKorea Institute of Machinery and Materials
Nari JeonChungnam National University

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Thermo Fisher Scientific Verios 5 UC

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Thermo Fisher Scientific Verios 5 UC

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Ion Density
Analysis: -
Diagnostic: -

Characteristic: Ion Flux
Analysis: -
Diagnostic: -

Characteristic: Electron Temperature, Te
Analysis: -
Diagnostic: -

Substrates

Si(100)
TiN
ITO

Notes

nice plot of thermal and plasma ALD HfO2 roughness vs deposition temperature data from several papers for TDMAH and TEMAH
1657