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Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Type:
Journal
Info:
Journal of Crystal Growth 539 (2020) 125624
Date:
2020-03-24
DOI:
https://doi.org/10.1016/j.jcrysgro.2020.125624

Author Information

Name Institution
Raffaella Lo NigroCNR-IMM
Emanuela SchiliròCNR-IMM
Giovanni ManninoCNR-IMM
Salvatore Di FrancoCNR-IMM
Fabrizio RoccaforteCNR-IMM

Films

Thermal HfO2

Hardware used: SENTECH
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 200-300C

Plasma HfO2

Hardware used: SENTECH
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Silicon

Notes

1500