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Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Type:
Other
Info:
arXiv.org > cond-mat > arXiv:1403.3787
Date:
2014-03-15
DOI:
http://arxiv.org/abs/1403.3787

Author Information

Name Institution
Xiaohui TangUniversite catholique de Louvain (UCL)
Nicolas ReckingerUniversity of Namur
Olivier PonceletUniversite catholique de Louvain (UCL)
Pierre LouetteUniversity of Namur
Jean-François ColomerUniversity of Namur
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Benoit HackensUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Damage, Defects
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Damage, Defects
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Substrates

Graphene
Silicon

Notes

Ultratech Fiji PEALD Al2O3 and HfO2 deposition on graphene study.
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