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Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (8) C123-C125 (2006)
Date:
2006-03-28
DOI:
http://dx.doi.org/10.1149/1.2206884

Author Information

Name Institution
Eun-Jeong KimChonnam National University
Do-Heyoung KimChonnam National University

Films

Plasma HfNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-300C

Plasma HfNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 150-300C

Plasma HfNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

1309