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Damage evaluation in graphene underlying atomic layer deposition dielectrics

Type:
Journal
Info:
Scientific Reports 5, Article number: 13523 (2015)
Date:
2015-07-27
DOI:
http://dx.doi.org/10.1038/srep13523

Author Information

Name Institution
Xiaohui TangUniversite catholique de Louvain (UCL)
Nicolas ReckingerUniversity of Namur
Olivier PonceletUniversite catholique de Louvain (UCL)
Pierre LouetteUniversity of Namur
Ferran UreñaUniversite catholique de Louvain (UCL)
Hosni IdrissiUniversity of Antwerp
Stuart TurnerUniversity of Antwerp
Damien CabosartUniversite catholique de Louvain (UCL)
Jean-François ColomerUniversity of Namur
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Benoit HackensUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Substrates

Graphene

Notes

381