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Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 11, PP. 1379-1382, 2016
Date:
2016-09-27
DOI:
http://dx.doi.org/10.1109/LED.2016.2613999

Author Information

Name Institution
Yi-He TsaiNational Chiao Tung University
Chen-Han ChouNational Chiao Tung University
An-Shih ShihNational Chiao Tung University
Yu-Hau JauNational United University
Wen-Kuan YehNational Nano Device Labs
Yu-Hsien LinNational United University
Fu-Hsiang KoNational Chiao Tung University
Chao-Hsin ChienNational Chiao Tung University

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

GeO2
Al2O3

Notes

943