TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
Info:
Journal of Applied Physics 117, 134105 (2015)
Author Information
Films
Film/Plasma Properties
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Analysis: XPS, X-ray Photoelectron Spectroscopy
Analysis: P-V, Polarization-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: I-V, Current-Voltage Measurements
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Analysis: TEM, Transmission Electron Microscope
Analysis: TEM, Transmission Electron Microscope
Substrates
Notes
| Ultratech/Cambridge NanoTech Fiji PEALD Si:HfO2 for ferroelectric study. |
| 345 |