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Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition

Type:
Conference Proceedings
Info:
ECS Trans. 2015 66(5): 269-275
Date:
2015-10-16
DOI:
http://ma.ecsdl.org/content/MA2015-01/20/1352.short

Author Information

Name Institution
B. J. HutchinsonTyndall National Institute, University College Cork
V. S. TeodorescuNational Institute of Materials Physics
R. NegreaNational Institute of Materials Physics
B. SheehanTyndall National Institute, University College Cork
Patrick CarolanTyndall National Institute, University College Cork
Shane O'BrienTyndall National Institute, University College Cork
M. ModreanuTyndall National Institute, University College Cork
Martin E. PembleTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork

Films

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Ti

Notes

492