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Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (31), pp 17032-17043
Date:
2015-07-21
DOI:
http://dx.doi.org/10.1021/acsami.5b03071

Author Information

Name Institution
Albena PaskalevaBulgarian Academy of Sciences
Mathias RommelFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Andreas HutzlerFriedrich-Alexander University Erlangen-Nuremberg
Dencho SpassovBulgarian Academy of Sciences
Anton J. BauerFraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Plasma HfO2

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma HfAlOx

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4156C

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4156C

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145A Semiconductor Parameter Analyzer

Characteristic: Leakage Current
Analysis: Temperature Dependent I-V, Current-Voltage Measurements
Diagnostic: HP 4145A Semiconductor Parameter Analyzer

Substrates

SiOxNy

Notes

408