About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements

Type:
Journal
Info:
Optics Express, v. 24, n. 7, p. 7654--7669 (2016)
Date:
2016-02-29
DOI:
http://dx.doi.org/10.1364/OE.24.007654

Author Information

Name Institution
Luis MeloUniversity of Victoria
Geoff BurtonUniversity of Victoria
Philip KubikSimon Fraser University
Peter WildUniversity of Victoria

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Substrates

Silicon

Notes

Available as section 3.3 in on-line thesis.
780