About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A132
Date:
2013-12-09
DOI:
http://dx.doi.org/10.1116/1.4853075

Author Information

Name Institution
Khalil El-HajjamLyon Nanotechnology Institute (INL)
Nicolas BabouxLyon Nanotechnology Institute (INL)
Francis CalmonLyon Nanotechnology Institute (INL)
Abdelkader SouifiFrench National Centre for Scientific Research (CNRS)
Olivier PonceletUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)
Serge EcoffeyFrench National Centre for Scientific Research (CNRS)
Dominique DrouinFrench National Centre for Scientific Research (CNRS)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Fowler-Nordheim (FN) Current Plots
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Effective Mass
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Pt

Notes

Anneal
Longer O2 plasma results in lower film capacitance.
12