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The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

Type:
Journal
Info:
Journal of Applied Physics 104, 064111 (2008)
Date:
2008-07-17
DOI:
http://dx.doi.org/10.1063/1.2978360

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfON

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(001)

Notes

1350