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Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 32, 03D123 (2014)
Date:
2014-04-15
DOI:
http://dx.doi.org/10.1116/1.4873323

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Peng ZhaoUniversity of Florida
Qanit TakmeelUniversity of Florida
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida
Matthew NelsonNorth Carolina State University
Chris M. FancherNorth Carolina State University
Everett D. GrimleyNorth Carolina State University
Xiahan SangNorth Carolina State University
James M. LeBeauNorth Carolina State University
Jacob L. JonesNorth Carolina State University

Films

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Hysteresis
Analysis: Sawyer-Tower circuit
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku

Substrates

Si(100)

Notes

677