Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
Type:
Journal
Info:
Journal of Materials Science: Materials in Electronics volume 30, pages 20360-20368 (2019)
Date:
2019-10-28
Author Information
| Name | Institution |
|---|---|
| Rajesh Kumar Jha | Indian Institute of Information Technology-Allahabad |
| Prashant Singh | Indian Institute of Information Technology-Allahabad |
| Manish Goswami | Indian Institute of Information Technology-Allahabad |
| B. R. Singh | Indian Institute of Information Technology-Allahabad |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometric Porosimetry (EP)
Characteristic: Refractive Index
Analysis: Ellipsometric Porosimetry (EP)
Characteristic: Extinction Coefficient
Analysis: Ellipsometric Porosimetry (EP)
Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1648 |