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Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET

Type:
Journal
Info:
Journal of Materials Science: Materials in Electronics volume 30, pages 20360-20368 (2019)
Date:
2019-10-28
DOI:
https://doi.org/10.1007/s10854-019-02459-7

Author Information

Name Institution
Rajesh Kumar JhaIndian Institute of Information Technology-Allahabad
Prashant SinghIndian Institute of Information Technology-Allahabad
Manish GoswamiIndian Institute of Information Technology-Allahabad
B. R. SinghIndian Institute of Information Technology-Allahabad

Films

Plasma HfO2

Hardware used: Custom
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: SENTECH SE400adv

Characteristic: Refractive Index
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: SENTECH SE400adv

Characteristic: Extinction Coefficient
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: SENTECH SE400adv

Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing
Diagnostic: Radient Technologies Precision Premier II

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(100)

Notes

1648