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The effects of layering in ferroelectric Si-doped HfO2 thin films

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 072906 (2014)
Date:
2014-08-11
DOI:
http://dx.doi.org/10.1063/1.4893738

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Qanit TakmeelUniversity of Florida
Chuanzhen ZhouNorth Carolina State University
Yang LiuNorth Carolina State University
Chris M. FancherNorth Carolina State University
Jacob L. JonesNorth Carolina State University
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida

Films

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Remanent Polarization
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

Substrates HF dipped.
Deposited films received RTA processing.
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