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Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition

Type:
Conference Proceedings
Info:
Optical Interference Coatings 2016
Date:
2016-06-19
DOI:
http://dx.doi.org/10.1364/OIC.2016.WB.2

Author Information

Name Institution
Ramutis DrazdysState Research Institute Center for Physical Sciences and Technology
Laurynas StaisiūnasState Research Institute Center for Physical Sciences and Technology
Konstantinas LeinartasState Research Institute Center for Physical Sciences and Technology
Rytis BuzelisState Research Institute Center for Physical Sciences and Technology
Tomas TolenisState Research Institute Center for Physical Sciences and Technology
Kęstutis JuškevičiusState Research Institute Center for Physical Sciences and Technology
Ugnius GimževskisState Research Institute Center for Physical Sciences and Technology
Algirdas SelskisState Research Institute Center for Physical Sciences and Technology
Vitalija JasulaitienėState Research Institute Center for Physical Sciences and Technology

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 125-250C

Film/Plasma Properties

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: PerkinElmer lambda 950 Spectrophotometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG MKII

Characteristic: Stress
Analysis: Stress Measurement
Diagnostic: Mahr ESDI MarSurf FI 1040 Z

Characteristic: Laser Induced Damage Threshold, LIDT
Analysis: Custom
Diagnostic: Custom

Substrates

SiO2

Notes

882