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Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

Type:
Journal
Info:
Appl. Phys. Lett. 106, 142103 (2015)
Date:
2015-03-26
DOI:
http://dx.doi.org/10.1063/1.4917027

Author Information

Name Institution
Wei YiHRL Laboratories
Andrey A. KiselevHRL Laboratories
Jacob ThorpHRL Laboratories
Ramsey NoahHRL Laboratories
Binh-Minh NguyenHRL Laboratories
Steven BuiHRL Laboratories
Rajesh D. RajavelHRL Laboratories
Tahir HussainHRL Laboratories
Mark GyureHRL Laboratories
Philip KratzStanford University
Qi QianPurdue University
Michael J. ManfraPurdue University
Vlad S. PribiagDelft University of Technology
Leo P. KouwenhovenDelft University of Technology
Charles M. MarcusUniversity of Copenhagen
Marko SokolichHRL Laboratories

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: -
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Substrates

InSb

Notes

Predeposition treatments with N2 plasma and TMA pulses.
Ultratech Fiji PEALD HfO2 gate dielectric for improved InSb/In1-xAlxSb quantum well heterostructure.
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