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Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing

Type:
Journal
Info:
Appl. Phys. Lett. 103, 263115 (2013)
Date:
2013-12-12
DOI:
http://dx.doi.org/10.1063/1.4858964

Author Information

Name Institution
Yoontae HwangUniversity of California - San Diego
Binh-Minh NguyenUniversity of California - San Diego
Shadi A. DayehUniversity of California - San Diego

Films

Plasma Pt

Hardware used: Picosun R200
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma Pt

Hardware used: Picosun R200
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Picosun R200
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Resistivity, Sheet Resistance
Analysis: TLM, Transmission Line Measurement
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Substrates

SiO2
HfO2

Notes

Picosun SUNALE R-200 Pt with reduced nucleation delay through TMA prepulse optimization.
170