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Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Type:

Journal

Info:

Thin Solid Films Volume 562, 1 July 2014, Pages 519-524

Date:

2014-04-25

DOI:

http://dx.doi.org/10.1016/j.tsf.2014.04.084

Author Information

Name	Institution
Benjamin David Briggs	State University of New York at Albany

Films

Plasma HfO₂

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me₂N)₄Hf, also CAS# 19782-68-4

CAS#: 19962-11-9

CAS#: 7782-44-7

Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: -

Characteristic: Compositional Depth Profiling

Analysis: SIMS, Secondary Ion Mass Spectrometry

Diagnostic: -

Characteristic: Unknown

Analysis: I-V, Current-Voltage Measurements

Diagnostic: -

Substrates

Cu

Notes

245