ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
Type:
Journal
Info:
Materials Science and Engineering B 285 (2022) 115964
Date:
2022-08-17
Author Information
| Name | Institution |
|---|---|
| M.A. Martínez-Puente | CIMAV - Center for Research in Advanced Materials |
| P. Horley | CIMAV - Center for Research in Advanced Materials |
| F.S. Aguirre-Tostado | CIMAV - Center for Research in Advanced Materials |
| J. López-Medina | National Autonomous University of Mexico |
| H.A. Bórbon-Nuñez | National Autonomous University of Mexico |
| H. Tiznado | National Autonomous University of Mexico |
| A. Susarrey-Arce | University of Twente |
| E. Martínez-Guerra | CIMAV - Center for Research in Advanced Materials |
Films
Thermal HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Optical Band Edge
Analysis: UV-VIS Spectroscopy
Substrates
| Si(100) |
Notes
| Compared plasma process with and without ion bombardment by using grounded grid between plasma source and substrate. |
| 1749 |