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Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Type:
Journal
Info:
Microelectronics Reliability 54 (2014) 2349-2354
Date:
2014-06-18
DOI:
http://dx.doi.org/10.1016/j.microrel.2014.06.013

Author Information

Name Institution
Maria Gloria Cano de AndradeUNESP - Univ Estadual Paulista
Joao Antonio MartinoUniversity of Sao Paulo
Marc AoulaicheIMEC
Nadine CollaertIMEC
Eddy SimoenIMEC
Cor ClaeysIMEC

Films

Plasma HfSiOx

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

215