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Optical properties and bandgap evolution of ALD HfSiOx films

Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:32
Date:
2014-12-30
DOI:
http://dx.doi.org/10.1186/s11671-014-0724-z

Author Information

Name Institution
Wen YangFudan University
Michael FronkTechnische Universität Chemnitz
Yang GengFudan University
Lin ChenFudan University
Qing-Qing SunFudan University
Ovidiu D. GordanTechnische Universität Chemnitz
Peng ZhouFudan University
Dietrich R. T. ZahnTechnische Universität Chemnitz
David Wei ZhangFudan University

Films

Plasma HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma SiO2

Hardware used: Beneq TFS-200
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma HfSiOx

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Optical Bandgap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Si(100)

Notes

Wafers RCA + HF + DI + N2 predeposition.
Beneq TFS-200 PEALD HfO2 and HfSiOx optical and bandgap properties study.
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