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Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (20), pp 13140-13149
Date:
2016-04-20
DOI:
http://dx.doi.org/10.1021/acsami.6b03029

Author Information

Name Institution
Peter F. SatterthwaiteStanford University
Andrew G. ScheuermannStanford University
Paul K. HurleyTyndall National Institute, University College Cork
Christopher E. D. ChidseyStanford University
Paul C. McIntyreStanford University

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Silicon

Notes

1157