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Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

Type:
Conference Proceedings
Info:
Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949107
Date:
2015-04-20
DOI:
http://dx.doi.org/10.1117/12.2178091

Author Information

Name Institution
Heather C. ChiamoriStanford University
Ruth MillerStanford University
Ateeq J. SuriaStanford University
Nicholas BroadStanford University
Debbie G. SeneskyStanford University

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Notes

497