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Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)

Type:
Journal
Info:
Applied Physics Letters 106, 102107 (2015)
Date:
2015-03-06
DOI:
http://dx.doi.org/10.1063/1.4915262

Author Information

Name Institution
Ye JiaUniversity at Buffalo
Ke ZengUniversity at Buffalo
Robert M. WallaceUniversity at Buffalo
Joseph A. GardellaUniversity at Buffalo
Uttam SingisettiUniversity at Buffalo

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Ga2O3
Silicon

Notes

Combined electrical and XPS data to establish band alignment between Ga2O3 substrate and Oxford Instruments FlexAL PEALD SiO2.
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