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Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Type:
Journal
Info:
Nanomaterials 2019, 9, 55
Date:
2018-12-27
DOI:
http://dx.doi.org/10.3390/nano9010055

Author Information

Name Institution
Hong-Ping MaFudan University
Jia-He YangFudan University
Jian-Guo YangFudan University
Li-Yuan ZhuFudan University
Wei HuangFudan University
Guang-Jie YuanShanghai University
Ji-Jun FengUniversity of Shanghai for Science and Technology
Tien-Chien JenUniversity of Johannesburg
Hong Liang LuFudan University

Films

Plasma SiO2

Hardware used: Beneq TFS-200
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker AXS ICON

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Specs

Characteristic: Microstructure
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

Si(100)

Notes

1542