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Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material

Type:
Conference Proceedings
Info:
Proc. SPIE 9627, Optical Systems Design 2015: Advances in Optical Thin Films V, 96270Q (September 23, 2015)
Date:
2015-09-07
DOI:
http://dx.doi.org/10.1117/12.2191283

Author Information

Name Institution
Kristin PfeifferFriedrich-Schiller-Universität Jena
Svetlana ShestaevaFriedrich-Schiller-Universität Jena
Astrid BingelFriedrich-Schiller-Universität Jena
Peter MunzertFraunhofer Institute for Applied Optics and Precision Engineering
Ulrike SchulzFraunhofer Institute for Applied Optics and Precision Engineering
Norbert KaiserFraunhofer Institute for Applied Optics and Precision Engineering
Andreas TünnermannFriedrich-Schiller-Universität Jena
Adriana SzeghalmiFriedrich-Schiller-Universität Jena

Films

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Characteristic: Abrasion Resistance
Analysis: -
Diagnostic: -

Characteristic: Adhesion
Analysis: -
Diagnostic: -

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: -

Substrates

Si(100)
Quartz
Glass, BK7

Notes

AR stack used HfO2 which may have been done with ALD.
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