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Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-22
DOI:
http://dx.doi.org/10.1116/1.4971399

Author Information

Name Institution
Daigo KikutaToyota Central Research and Development Laboratories
Kenji ItohToyota Central Research and Development Laboratories
Tetsuo NaritaToyota Central Research and Development Laboratories
Tomohiko MoriToyota Central Research and Development Laboratories

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Conduction Band Offset
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Breakdown Voltage Lifetime
Analysis: TDDB, Time Dependent Dielectric Breakdown
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

GaN

Notes

1159