About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 04CG07 (2017)
Date:
2016-12-28
DOI:
https://doi.org/10.7567/JJAP.56.04CG07

Author Information

Name Institution
Kenji ItohToyota Central Research and Development Laboratories
Daigo KikutaToyota Central Research and Development Laboratories
Tetsuo NaritaToyota Central Research and Development Laboratories
Keita KataokaToyota Central Research and Development Laboratories
Noritake IsomuraToyota Central Research and Development Laboratories
Kousuke KitazumiToyota Central Research and Development Laboratories
Tomohiko MoriToyota Central Research and Development Laboratories

Films

Plasma AlSixOy

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Band Gap
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R4000 electron spectrometer

Characteristic: Valence Band
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R4000 electron spectrometer

Substrates

GaN
Silicon

Notes

986