Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:370
Date:
2017-04-13
Author Information
| Name | Institution |
|---|---|
| Yanqiang Cao | Nanjing University |
| Bing Wu | Nanjing University |
| Di Wu | Nanjing University |
| Aidong Li | Nanjing University |
Films
Plasma SiO2
Thermal HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Ge |
| SiO2 |
Notes
| 1053 |