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Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:370
Date:
2017-04-13
DOI:
http://dx.doi.org/10.1186/s11671-017-2083-z

Author Information

Name Institution
Yanqiang CaoNanjing University
Bing WuNanjing University
Di WuNanjing University
Aidong LiNanjing University

Films

Plasma SiO2

Hardware used: Picosun R200
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Ge
SiO2

Notes

1053